Manufacturer Part Number
NDS8435A
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single P-Channel MOSFET Transistor
Product Features and Performance
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology
Drain-to-Source Voltage (Vdss) up to 30V
Gate-to-Source Voltage (Vgs) up to ±20V
On-State Resistance (Rds(on)) of 23 milliohms @ 7.9A, 10V
Continuous Drain Current (Id) of 7.9A @ 25°C
Input Capacitance (Ciss) of 1800 pF @ 15V
Power Dissipation (Pd) of 2.5W @ 25°C
Product Advantages
Low on-state resistance for efficient power conversion
High current handling capability
Suitable for a wide range of power management and switching applications
Key Technical Parameters
Package: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -55°C to 150°C (TJ)
FET Type: P-Channel
Threshold Voltage (Vgs(th)): 3V @ 250μA
Gate Charge (Qg): 67 nC @ 10V
Quality and Safety Features
Meets industrial-grade requirements
Robust design for reliable operation
Compatibility
Suitable for surface mount applications
Application Areas
Power management circuits
Motor control
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency due to low on-state resistance
High current handling capability for demanding applications
Reliable performance across a wide temperature range
Proven industrial-grade quality and safety