NDS356AP - onsemi

Manufacturer Part Number

NDS356AP

Manufacturer

onsemi

Introduction

The NDS356AP is a P-channel MOSFET transistor designed for a variety of low-power applications.

Product Features and Performance

Operating temperature range of -55°C to 150°C (TJ)

Drain-to-source voltage (Vdss) of 30 V

Maximum gate-to-source voltage (Vgs) of ±20 V

Low on-resistance (Rds(on)) of 200 mΩ @ 1.3 A, 10 V

Continuous drain current (Id) of 1.1 A at 25°C (Ta)

Input capacitance (Ciss) of 280 pF @ 10 V

Maximum power dissipation (Ta) of 500 mW

Product Advantages

Low on-resistance for efficient power delivery

Wide operating temperature range for versatile applications

High drain-to-source voltage for increased design flexibility

Small SOT-23-3 package for compact PCB layouts

Key Technical Parameters

Transistor type: P-channel MOSFET

Threshold voltage (Vgs(th)) of 2.5 V @ 250 μA

Gate drive voltage range: 4.5 V to 10 V

Gate charge (Qg) of 4.4 nC @ 5 V

Surface mount packaging

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with a variety of low-power electronic circuits and applications

Application Areas

Power management circuits

Switching applications

Battery-powered devices

General electronics

Product Lifecycle

The NDS356AP is an active product, with no indication of nearing discontinuation.

Replacements and upgrades may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Excellent power efficiency due to low on-resistance

Wide operating temperature range for versatile use cases

Small packaging for compact PCB designs

Robust and reliable performance

RoHS3 compliance for environmentally-friendly applications