Manufacturer Part Number
NDC7003P
Manufacturer
onsemi
Introduction
The NDC7003P is a dual P-channel enhancement-mode MOSFET in a SuperSOT-6 package, designed for a wide range of power management and switching applications.
Product Features and Performance
60V drain-to-source voltage rating
5Ω maximum on-resistance at 340mA, 10V
340mA continuous drain current at 25°C
66pF maximum input capacitance at 25V
Logic-level gate drive (3.5V maximum gate threshold voltage)
2nC maximum gate charge at 10V
-55°C to 150°C operating temperature range
700mW maximum power dissipation
Product Advantages
Compact SuperSOT-6 package for space-constrained designs
Low on-resistance for efficient power switching
Logic-level gate drive for easy microcontroller interfacing
Wide operating temperature range for industrial applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 5Ω @ 340mA, 10V
Continuous Drain Current (Id): 340mA @ 25°C
Input Capacitance (Ciss): 66pF @ 25V
Gate Threshold Voltage (Vgs(th)): 3.5V @ 250μA
Gate Charge (Qg): 2.2nC @ 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Compatible with standard MOSFET drivers and control circuits
Application Areas
Power management
Switching applications
General-purpose power control
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement/upgrade options available from onsemi
Several Key Reasons to Choose This Product
Compact SuperSOT-6 package for space-constrained designs
Low on-resistance for efficient power switching
Logic-level gate drive for easy microcontroller interfacing
Wide operating temperature range for industrial applications
RoHS3 compliance and AEC-Q101 qualification for reliability
NDC7002N-NLFairchild (onsemi)