Manufacturer Part Number
NDBA180N10BT4H
Manufacturer
onsemi
Introduction
The NDBA180N10BT4H is a high-performance N-channel MOSFET transistor from onsemi, suitable for a wide range of power electronics applications.
Product Features and Performance
100V drain-to-source voltage
180A continuous drain current
8mΩ maximum on-resistance at 50A, 15V
175°C maximum junction temperature
6950pF maximum input capacitance at 50V
200W maximum power dissipation
Product Advantages
Excellent power handling and efficiency
Low on-resistance for reduced power losses
Compact DPAK (TO-263) surface mount package
High-temperature operation
Key Technical Parameters
Vdss: 100V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 2.8mΩ @ 50A, 15V
Id (Continuous) @ 25°C: 180A
Ciss (Max) @ Vds: 6950pF @ 50V
Pd (Max): 200W
Quality and Safety Features
Robust design for reliable operation
Complies with industry safety and quality standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial equipment.
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial automation and control
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacements and upgrades may be available from onsemi as technology evolves.
Key Reasons to Choose This Product
Excellent power handling and efficiency for high-current applications
Low on-resistance for reduced power losses and improved system performance
Compact DPAK (TO-263) surface mount package for space-constrained designs
Reliable operation at high temperatures up to 175°C
Wide range of applications in power electronics and industrial automation
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