Manufacturer Part Number
NCV5183DR2G
Manufacturer
onsemi
Introduction
High-performance, low-side and high-side gate driver IC for automotive applications
Product Features and Performance
Wide operating voltage range of 9V to 18V
Two independent half-bridge gate drivers
Peak output current of 4.3A source/sink
Fast rise and fall times of 12ns
Wide temperature range of -40°C to 125°C
AEC-Q100 qualified for automotive applications
Product Advantages
Highly efficient gate driving for power MOSFETs/IGBTs
Wide voltage and temperature range for robust automotive use
Compact 8-SOIC package for space-constrained designs
Key Technical Parameters
Supply voltage: 9V to 18V
Output current: 4.3A peak source/sink
Rise/fall time: 12ns (typical)
Operating temperature: -40°C to 125°C
Quality and Safety Features
RoHS3 compliant
AEC-Q100 qualified
Compatibility
Suitable for driving N-channel MOSFET/IGBT half-bridges
Application Areas
Automotive applications, such as motor drives, power converters, and inverters
Product Lifecycle
Currently available, no discontinuation plans known
Key Reasons to Choose This Product
High-performance gate driving for automotive power electronics
Robust design with wide voltage and temperature range
Compact package for space-constrained designs
AEC-Q100 qualified for automotive reliability