Manufacturer Part Number
NCV5104DR2G
Manufacturer
onsemi
Introduction
A high-performance power management integrated circuit, optimized for driving half-bridge power stages with ease and efficiency.
Product Features and Performance
Integrated high-side and low-side drivers
Supports synchronous channel operation
Designed for fast switching devices like IGBTs and N-channel MOSFETs
Extended supply voltage range from 10V to 20V
Non-inverting input configuration
High bootstrap voltage capacity up to 600V
Product Advantages
Robust output source and sink current capability
Compact and reliable SOIC-8 packaging
AEC-Q100 qualified for automotive applications
Low logic input thresholds for flexible interfacing
Fast rise and fall times enhance switching speed
Key Technical Parameters
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output: 250mA (Source), 500mA (Sink)
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time: 85ns / 35ns
Operating Temperature: -40°C ~ 125°C
Quality and Safety Features
AEC-Q100 automotive qualification
Wide operating temperature range
Designed for high-side voltage switching reliability
Compatibility
Compatible with IGBTs and N-channel MOSFETs
Suitable for surface mount technology with 8-SOIC package
Application Areas
Automotive power management systems
Industrial motor control
High-frequency power converters
Switched mode power supplies
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Potential for future replacements or upgrades based on technology evolution
Reasons to Choose This Product
Automotive-grade reliability and quality
Optimized for efficient power management in high-voltage applications
Flexible input logic levels for easy design integration
Fast switching capabilities for improved power efficiency
Robust packaging suitable for challenging environments
Supported by onsemi's reputable technical and customer service resources