Manufacturer Part Number
NCV1413BDR2G
Manufacturer
onsemi
Introduction
The NCV1413BDR2G is a discrete semiconductor product featuring a 7 NPN Darlington transistor array.
Product Features and Performance
7 NPN Darlington transistors
High DC current gain (hFE) of 1000 minimum at 350mA, 2V
Collector-emitter breakdown voltage of 50V
Collector current (Ic) of 500mA maximum
Low collector-emitter saturation voltage (Vce Sat) of 1.6V maximum at 500A, 350mA
Operating temperature up to 150°C
Product Advantages
Compact 16-SOIC surface mount package
Suitable for high-current switching applications
Improved thermal performance compared to individual transistors
Key Technical Parameters
Package: 16-SOIC (0.154", 3.90mm Width)
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 500mA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA
Transistor Type: 7 NPN Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Quality and Safety Features
RoHS3 compliant
Compatibility
Can be used in a variety of high-current switching applications.
Application Areas
Motor control
Power supplies
Relay/solenoid drivers
Industrial automation
Product Lifecycle
The NCV1413BDR2G is an active product and there are no indications of it being nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High DC current gain for efficient power switching
Compact surface mount package for space-constrained designs
Robust thermal performance for high-current applications
RoHS3 compliance for environmental responsibility
Broad compatibility and suitability for various industrial applications