NCP5355DR2G - onsemi

Manufacturer Part Number

NCP5355DR2G

Manufacturer

onsemi

Introduction

The NCP5355DR2G is a dual-channel, high-speed, high-current MOSFET gate driver with an inverting and non-inverting input configuration.

Product Features and Performance

Dual-channel gate driver

Inverting and non-inverting input configuration

High-speed operation with 15ns rise and fall times

Peak output current of 2A source and sink

Operates from 8V to 14V supply voltage

Supports up to 26V on the high-side bootstrap supply

Wide operating temperature range of 0°C to 125°C

Product Advantages

High-performance gate driving for efficient power conversion

Flexible input configuration for various circuit topologies

Robust design for reliable operation in demanding applications

Small 8-SOIC package for compact PCB layout

Key Technical Parameters

Supply voltage: 8V to 14V

Input type: Inverting and non-inverting

Channel type: Synchronous

Number of drivers: 2

Logic voltage (VIL, VIH): 0.8V, 2V

Driven configuration: Half-bridge

Gate type: N-Channel MOSFET

Rise/fall time (typical): 15ns, 15ns

Peak output current (source, sink): 2A, 2A

High-side voltage (max bootstrap): 26V

Quality and Safety Features

Robust design for reliable operation

Extended operating temperature range of 0°C to 125°C

Compliance with safety and environmental standards

Compatibility

Compatible with a wide range of power MOSFET devices

Suitable for various power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial and automotive electronics

Product Lifecycle

The NCP5355DR2G is an active product

Replacements and upgrades may be available from onsemi

Key Reasons to Choose This Product

High-performance gate driving for efficient power conversion

Flexible input configuration for various circuit topologies

Robust design for reliable operation in demanding applications

Small 8-SOIC package for compact PCB layout

Wide operating temperature range and compliance with safety standards

Compatibility with a wide range of power MOSFET devices