NCP1392DDR2G - onsemi

Manufacturer Part Number

NCP1392DDR2G

Manufacturer

onsemi

Introduction

The NCP1392DDR2G is a high-performance gate driver designed for power management applications, suitable for driving N-Channel MOSFETs in a half-bridge configuration.

Product Features and Performance

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Supply Voltage Range: 8V to 20V

Peak Output Current (Source, Sink): 500mA, 1A

High Side Voltage Max (Bootstrap): 600 V

Rise Time (Typical): 40ns

Fall Time (Typical): 20ns

Operating Temperature Range: -40°C to 125°C

Mounting Type: Surface Mount

Package/Case: 8-SOIC (0.154", 3.90mm Width)

Product Advantages

Capable of handling high bootstrap voltages up to 600V

Fast switching with rise and fall times of 40ns and 20ns respectively

Supports a wide range of supply voltages

Dual driver configuration enhances power management flexibility

Key Technical Parameters

Voltage Supply: 8V ~ 20V

Current Peak Output (Source, Sink): 500mA, 1A

High Side Voltage Max (Bootstrap): 600 V

Rise / Fall Time (Typical): 40ns, 20ns

Operating Temperature: -40°C ~ 125°C

Quality and Safety Features

Robust operating temperature range ensuring stability in extreme conditions

Compatibility

Compatible with N-Channel MOSFETs

Suitable for surface mount technology

Application Areas

Power Management Systems

Electronic Power Devices

Motor Control Systems

Product Lifecycle

Status: Not For New Designs

Note: Users should consider alternatives or consult the manufacturer for upgrades.

Several Key Reasons to Choose This Product

High bootstrap voltage capacity up to 600V, suitable for various power applications

Efficient switching characteristics with low rise and fall times increasing overall system efficiency

Broad operating temperature range making it ideal for harsh environments

Compact 8-SOIC package suitable for space-constrained applications