Manufacturer Part Number
MURA130T3G
Manufacturer
onsemi
Introduction
High-speed, high-voltage silicon rectifier diode in a SMA package.
Product Features and Performance
High reverse voltage capability up to 300V
Low forward voltage drop of 1.1V @ 1A
Fast reverse recovery time of 65ns
Average rectified current up to 2A
Operating temperature range from -65°C to 175°C
Product Advantages
Excellent high-frequency performance
Robust and reliable design
Compact SMA package
Key Technical Parameters
Reverse Voltage (Vr): 300V
Forward Voltage (Vf): 1.1V @ 1A
Reverse Leakage Current (Ir): 5A @ 300V
Reverse Recovery Time (trr): 65ns
Average Rectified Current (Io): 2A
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
Suitable for various power supply, DC-DC converter, and motor drive applications
Application Areas
Power supplies
DC-DC converters
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available.
Several Key Reasons to Choose This Product
High reverse voltage capability up to 300V, allowing for use in high-voltage applications.
Fast reverse recovery time of 65ns, enabling high-frequency operation.
Compact SMA package, providing a space-saving solution.
Robust and reliable design, ensuring long-term performance.
RoHS3 compliance, meeting environmental regulations.
MURA1100T3GAMI Semiconductor/onsemi