Manufacturer Part Number
MUR2100EG
Manufacturer
onsemi
Introduction
High-speed, high-voltage silicon rectifier diode designed for use in power supplies, DC-DC converters, and other high-frequency switched-mode power applications.
Product Features and Performance
Fast reverse recovery time of 100 ns
Operates at high temperatures up to 175°C
High reverse voltage rating of 1000 V
Average rectified current of 2 A
Forward voltage drop of 2.2 V at 2 A
Product Advantages
Suitable for high-frequency, switched-mode power conversion applications
Robust design for reliable operation at high temperatures
Provides high-speed switching with low power losses
Key Technical Parameters
Reverse Leakage Current: 10 A @ 1000 V
Forward Voltage: 2.2 V @ 2 A
Reverse Recovery Time: 100 ns
Reverse Voltage: 1000 V
Average Rectified Current: 2 A
Quality and Safety Features
RoHS3 compliant
Axial package design for easy installation
Compatibility
Suitable for use in a wide range of power supply and power conversion applications
Application Areas
Power supplies
DC-DC converters
Switched-mode power supplies
High-frequency power conversion circuits
Product Lifecycle
Current production model, no discontinuation planned
Several Key Reasons to Choose This Product
Fast reverse recovery time for high-frequency operation
High reverse voltage and current ratings for robust performance
Reliable operation at high temperatures
RoHS3 compliance for use in a wide range of applications
Axial package design for easy installation