Manufacturer Part Number
MUR1100EG
Manufacturer
onsemi
Introduction
High-voltage, fast-recovery rectifier diode suitable for use in switching power supplies, class D and E amplifiers, and other high-frequency power conversion applications.
Product Features and Performance
High reverse voltage capability up to 1000V
Fast reverse recovery time of 100ns
Low forward voltage drop of 1.75V at 1A
Average rectified current rating of 1A
Wide operating temperature range from -65°C to 175°C
Product Advantages
Excellent for high-frequency, high-voltage applications
Robust design for reliable performance
Ideal for use in power conversion and amplifier circuits
Key Technical Parameters
Reverse Leakage Current: 10A @ 1000V
Forward Voltage: 1.75V @ 1A
Reverse Recovery Time: 100ns
Reverse Voltage: 1000V (max)
Average Rectified Current: 1A
Quality and Safety Features
RoHS3 compliant
Axial package for through-hole mounting
Compatibility
Suitable for use in switching power supplies, class D and E amplifiers, and other high-frequency power conversion applications
Application Areas
Power conversion
High-frequency amplifiers
Switching power supplies
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
High reverse voltage capability up to 1000V
Fast reverse recovery time of 100ns for efficient high-frequency operation
Low forward voltage drop for improved efficiency
Robust design and wide temperature range for reliable performance
RoHS3 compliance for use in modern electronics
MUR110ERLGAMI Semiconductor/onsemi