Manufacturer Part Number
MTP2P50EG
Manufacturer
onsemi
Introduction
High-voltage, P-channel power MOSFET suitable for power switching and conversion applications.
Product Features and Performance
High-voltage 500V MOSFET
Low on-resistance of 6Ω @ 1A, 10V
Continuous drain current of 2A at 25°C
Power dissipation capability of 75W
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 27nC @ 10V
Product Advantages
High-voltage operation
Low on-resistance for low conduction losses
High power handling capability
Reliable performance across wide temperature range
Efficient switching for improved energy efficiency
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6Ω @ 1A, 10V
Continuous Drain Current (Id): 2A @ 25°C
Power Dissipation (Tc): 75W
Input Capacitance (Ciss): 1183pF @ 25V
Gate Charge (Qg): 27nC @ 10V
Quality and Safety Features
Robust TO-220 package for high reliability
Designed and manufactured to high quality standards
Compliance with relevant safety and regulatory requirements
Compatibility
Suitable for a wide range of power switching and conversion applications
Compatible with common gate drive circuits and control systems
Application Areas
Power supplies
Motor drives
Industrial automation equipment
Household appliances
Lighting ballasts
Product Lifecycle
This product is an active and widely available MOSFET
Replacement and upgrade options are readily available from onsemi and other manufacturers
Key Reasons to Choose This Product
High-voltage capability for demanding applications
Low on-resistance for efficient power handling
Reliable performance across wide temperature range
Efficient switching characteristics for energy-saving designs
Proven quality and availability from a leading manufacturer
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