MTD5P06VT4 - onsemi

Manufacturer Part Number

MTD5P06VT4

Manufacturer

onsemi

Introduction

This is a P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from onsemi.

Product Features and Performance

60V Drain to Source Voltage (Vdss)

450mOhm maximum On-State Resistance (Rds(on)) at 2.5A, 10V

5A Continuous Drain Current (Id) at 25°C

510pF maximum Input Capacitance (Ciss) at 25V

1W Power Dissipation at 25°C, 40W at 25°C (Tc)

Operating Temperature Range: -55°C to 175°C

Product Advantages

Suitable for a wide range of power management and switching applications

Efficient power conversion with low on-state resistance

Robust design for reliable operation in harsh environments

Key Technical Parameters

FET Type: P-Channel

Vgs(th) (Max): 4V at 250uA

Drive Voltage (Max Rds On, Min Rds On): 10V

Gate Charge (Qg) (Max): 20nC at 10V

Quality and Safety Features

RoHS non-compliant

DPAK package for surface mount assembly

Compatibility

Compatible with various power management and switching circuit designs

Application Areas

Power supplies

Motor drivers

Amplifiers

Switching regulators

General purpose power switching

Product Lifecycle

This product is an active, in-production part from onsemi. Replacement or upgrade options may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Reliable performance with low on-state resistance for efficient power conversion

Wide operating temperature range for use in harsh environments

Robust DPAK package for secure surface mount assembly

Extensive application flexibility in power management and switching circuits