Manufacturer Part Number
MTD2955VT4
Manufacturer
onsemi
Introduction
This product is a single P-channel MOSFET transistor designed for high-performance power switching applications.
Product Features and Performance
Capable of handling continuous drain current up to 12A at 25°C case temperature
Drain-to-source voltage up to 60V
On-state resistance as low as 230mΩ at 6A, 10V gate-to-source voltage
Input capacitance as low as 770pF at 25V drain-to-source voltage
Maximum power dissipation of 60W at 25°C case temperature
Product Advantages
Excellent performance for power switching applications
Small DPAK surface mount package for compact designs
Suitable for a wide range of operating temperatures from -55°C to 175°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 230mΩ @ 6A, 10V
Continuous Drain Current (Id): 12A @ 25°C case temperature
Input Capacitance (Ciss): 770pF @ 25V
Power Dissipation (Pd): 60W @ 25°C case temperature
Quality and Safety Features
RoHS non-compliant
Suitable for high-reliability applications
Compatibility
DPAK (TO-252-3) surface mount package
Application Areas
High-performance power switching applications
Motor drives
Power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent performance characteristics, including high drain current, low on-state resistance, and high power dissipation
Compact DPAK surface mount package for space-constrained designs
Wide operating temperature range suitable for a variety of applications
Proven reliability and quality from onsemi, a leading semiconductor manufacturer
