Manufacturer Part Number
MTB30P06VT4G
Manufacturer
onsemi
Introduction
This product is a P-channel MOSFET transistor from onsemi, a leading manufacturer of discrete semiconductor devices.
Product Features and Performance
60V Drain-to-Source Voltage (Vdss)
±15V Gate-to-Source Voltage (Vgs) rating
80mΩ maximum On-Resistance (Rds(on)) at 15A, 10V
30A continuous Drain Current (Id) at 25°C
2190pF maximum Input Capacitance (Ciss) at 25V
3W Power Dissipation (Ta), 125W (Tc)
Operating Temperature range: -55°C to 175°C
Product Advantages
Low on-resistance for efficient power switching
Wide voltage and current handling capability
Compact DPAK surface mount package
Suitable for a variety of power management applications
Key Technical Parameters
MOSFET Technology: P-Channel
Vgs(th) (Max): 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max): 80nC @ 10V
Quality and Safety Features
Robust DPAK package for reliable operation
Designed to meet industry safety and quality standards
Compatibility
This MOSFET is compatible with a wide range of power management and control circuits.
Application Areas
Switch-mode power supplies
Motor drives
Power inverters
Battery chargers
Industrial and consumer electronics
Product Lifecycle
The MTB30P06VT4G is an active product, and onsemi continues to support this device. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Compact and reliable DPAK package
Versatile applications in power management and control
Backed by onsemi's reputation for quality and innovation
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