Manufacturer Part Number
MSD602-RT1G
Manufacturer
onsemi
Introduction
This is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for a wide range of applications, including amplifiers, switches, and power control circuits.
Product Features and Performance
High current-carrying capability up to 500 mA
Low collector-emitter saturation voltage of 600 mV at 30 mA, 300 mA
High DC current gain (hFE) of 120 at 150 mA, 10 V
Low collector cutoff current of 100 nA
Capable of operating at high temperatures up to 150°C
Product Advantages
Excellent thermal performance and power handling capacity
Compact surface mount package (SC-59) for efficient board space utilization
Reliable and robust design for long-term operation
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 50 V
Power Dissipation (Max): 200 mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Suitable for Tape & Reel packaging for automated assembly
Compatibility
This transistor is compatible with a wide range of electronic circuits and systems, making it a versatile choice for various applications.
Application Areas
Amplifiers
Switches
Power control circuits
General-purpose electronics
Product Lifecycle
The MSD602-RT1G is an active product in onsemi's portfolio, with no indication of discontinuation or replacement in the near future.
Key Reasons to Choose This Product
High-performance and reliable operation
Compact surface mount package for efficient board integration
Excellent thermal management and power handling capabilities
RoHS3 compliance for environmental sustainability
Availability in Tape & Reel packaging for automated assembly
MSD5C46T-LF-F20MSTARA