MSD602-RT1G - onsemi

Manufacturer Part Number

MSD602-RT1G

Manufacturer

onsemi

Introduction

This is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for a wide range of applications, including amplifiers, switches, and power control circuits.

Product Features and Performance

High current-carrying capability up to 500 mA

Low collector-emitter saturation voltage of 600 mV at 30 mA, 300 mA

High DC current gain (hFE) of 120 at 150 mA, 10 V

Low collector cutoff current of 100 nA

Capable of operating at high temperatures up to 150°C

Product Advantages

Excellent thermal performance and power handling capacity

Compact surface mount package (SC-59) for efficient board space utilization

Reliable and robust design for long-term operation

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 50 V

Power Dissipation (Max): 200 mW

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant for environmental responsibility

Suitable for Tape & Reel packaging for automated assembly

Compatibility

This transistor is compatible with a wide range of electronic circuits and systems, making it a versatile choice for various applications.

Application Areas

Amplifiers

Switches

Power control circuits

General-purpose electronics

Product Lifecycle

The MSD602-RT1G is an active product in onsemi's portfolio, with no indication of discontinuation or replacement in the near future.

Key Reasons to Choose This Product

High-performance and reliable operation

Compact surface mount package for efficient board integration

Excellent thermal management and power handling capabilities

RoHS3 compliance for environmental sustainability

Availability in Tape & Reel packaging for automated assembly