Manufacturer Part Number
MSC2712GT1G
Manufacturer
onsemi
Introduction
The MSC2712GT1G is a discrete semiconductor product categorized as a bipolar junction transistor (BJT) - single.
Product Features and Performance
RoHS3 compliant
SC-59 package
Operating temperature up to 150°C (TJ)
Power rating of 200 mW
Collector-emitter breakdown voltage up to 50 V
Collector current up to 100 mA
Collector cutoff current up to 100 nA
Low collector-emitter saturation voltage
DC current gain (hFE) of at least 200 at 2 mA, 6 V
Transition frequency of 50 MHz
Product Advantages
Compact SC-59 surface mount package
Reliable high-temperature operation
High breakdown voltage and collector current capability
Low saturation voltage for efficient performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 100 nA
Vce Saturation (Max) @ Ib, Ic: 500 mV @ 10 mA, 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2 mA, 6 V
Frequency Transition: 50 MHz
Quality and Safety Features
RoHS3 compliant for environmental safety
Compatibility
Surface mount TO-236-3, SC-59, SOT-23-3 package
Application Areas
General-purpose amplifier and switching applications
Product Lifecycle
Currently in production, no plans for discontinuation
Key Reasons to Choose
Reliable high-temperature operation
High breakdown voltage and collector current capability
Low saturation voltage for efficient performance
Compact surface mount package
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