MSA1162GT1G - onsemi

Manufacturer Part Number

MSA1162GT1G

Manufacturer

onsemi

Introduction

onsemi's MSA1162GT1G is a PNP bipolar junction transistor (BJT) in a SC-59 package designed for general-purpose amplification and switching applications.

Product Features and Performance

Suitable for amplification and switching applications

High current gain (hFE) of at least 200 at 2 mA, 6 V

Transition frequency (fT) of 80 MHz

Low collector-emitter saturation voltage (VCE(sat)) of 500 mV at 10 mA, 100 mA

Compact SC-59 surface-mount package

Product Advantages

Excellent high-frequency performance

Low saturation voltage for efficient switching

Compact surface-mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 100 nA

Power Dissipation: 200 mW

Operating Temperature: -55°C to +150°C

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Suitable for general-purpose amplification and switching applications in electronic circuits

Application Areas

Amplifiers

Switches

General-purpose electronic circuits

Product Lifecycle

Active product

Replacement parts and upgrades available

Key Reasons to Choose This Product

Excellent high-frequency performance for efficient amplification and switching

Low saturation voltage for efficient switching

Compact surface-mount package for space-constrained designs

RoHS3 compliance for environmentally-friendly applications

Manufactured in an ISO-certified facility for reliable quality