Manufacturer Part Number
MPSA56RLRPG
Manufacturer
onsemi
Introduction
The MPSA56RLRPG is a discrete semiconductor product, specifically a bipolar junction transistor (BJT) in a single transistor configuration.
Product Features and Performance
Operating temperature range of -55°C to 150°C
Maximum power dissipation of 625 mW
Maximum collector-emitter breakdown voltage of 80 V
Maximum collector current of 500 mA
Maximum collector cutoff current of 100 nA
Maximum collector-emitter saturation voltage of 250 mV at 10 mA and 100 mA collector current
PNP transistor type
Minimum DC current gain (hFE) of 100 at 100 mA collector current and 1 V collector-emitter voltage
Transition frequency of 50 MHz
Product Advantages
Wide operating temperature range
High power handling capability
High breakdown voltage
High collector current capability
Low collector cutoff current
Low collector-emitter saturation voltage
High current gain
High transition frequency
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Maximum power dissipation: 625 mW
Maximum collector-emitter breakdown voltage: 80 V
Maximum collector current: 500 mA
Maximum collector cutoff current: 100 nA
Maximum collector-emitter saturation voltage: 250 mV
Transistor type: PNP
Minimum DC current gain (hFE): 100
Transition frequency: 50 MHz
Quality and Safety Features
Designed and manufactured to meet industry standards for reliability and safety
Compatibility
Compatible with various electronic circuit designs and applications that require a PNP bipolar junction transistor with the specified technical parameters.
Application Areas
Suitable for use in a wide range of electronic circuits and applications, such as amplifiers, switches, and power control circuits.
Product Lifecycle
This product is an ongoing, actively supported part of onsemi's product portfolio and is not nearing discontinuation.
Replacement and upgrade options may be available as technology advances.
Several Key Reasons to Choose This Product
Wide operating temperature range, allowing for use in diverse environmental conditions.
High power handling capability, enabling efficient power control and amplification.
High breakdown voltage, providing robust voltage handling for various circuit designs.
High collector current capability, allowing for higher current-driven applications.
Low collector cutoff current, contributing to improved circuit performance and efficiency.
Low collector-emitter saturation voltage, reducing power dissipation and heat generation.
High current gain, enabling efficient signal amplification and control.
High transition frequency, allowing for use in high-frequency applications.
Reliable and safe design, meeting industry standards for quality and safety.
Ongoing product support and availability, ensuring long-term access and compatibility.
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