MPSA14RLRAG - onsemi

Manufacturer Part Number

MPSA14RLRAG

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

TO-92 (TO-226) package

Through-hole mounting

Operating temperature range: -55°C to 150°C

Maximum power: 625 mW

Maximum collector-emitter breakdown voltage: 30 V

Maximum collector current: 500 mA

Maximum collector cutoff current: 100 nA

Maximum collector-emitter saturation voltage: 1.5 V

Minimum DC current gain (hFE): 20,000

Transition frequency: 125 MHz

Product Advantages

Excellent performance characteristics

Wide operating temperature range

Compact and rugged TO-92 (TO-226) package

Key Technical Parameters

Package: TO-226-3, TO-92-3 Long Body (Formed Leads)

Supplier Device Package: TO-92 (TO-226)

Packaging: Tape & Reel (TR)

Transistor Type: NPN Darlington

Quality and Safety Features

Meets industry standards and regulations

Compatibility

Compatible with various electronic circuit designs

Application Areas

Suitable for use in a wide range of electronic circuits and devices

Product Lifecycle

Active product

Replacement or upgrade options may be available

Several Key Reasons to Choose This Product

High-performance characteristics

Wide operating temperature range

Compact and rugged package

Meets industry quality and safety standards

Compatibility with various electronic circuit designs