Manufacturer Part Number
MPSA14RLRAG
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
TO-92 (TO-226) package
Through-hole mounting
Operating temperature range: -55°C to 150°C
Maximum power: 625 mW
Maximum collector-emitter breakdown voltage: 30 V
Maximum collector current: 500 mA
Maximum collector cutoff current: 100 nA
Maximum collector-emitter saturation voltage: 1.5 V
Minimum DC current gain (hFE): 20,000
Transition frequency: 125 MHz
Product Advantages
Excellent performance characteristics
Wide operating temperature range
Compact and rugged TO-92 (TO-226) package
Key Technical Parameters
Package: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92 (TO-226)
Packaging: Tape & Reel (TR)
Transistor Type: NPN Darlington
Quality and Safety Features
Meets industry standards and regulations
Compatibility
Compatible with various electronic circuit designs
Application Areas
Suitable for use in a wide range of electronic circuits and devices
Product Lifecycle
Active product
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
High-performance characteristics
Wide operating temperature range
Compact and rugged package
Meets industry quality and safety standards
Compatibility with various electronic circuit designs
MPSA14NTE Electronics, IncTRANS NPN DARL 30V 0.5A TO92