Manufacturer Part Number
MPS751-D26Z
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor Bipolar (BJT) Single
Product Features and Performance
RoHS3 Compliant
TO-92-3 Package
Operating Temperature: 150°C (TJ)
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage: 60 V
Collector Current (Max): 2 A
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 500 mV @ 200 mA, 2 A
Transistor Type: PNP
DC Current Gain (hFE): 40 Min @ 2 A, 2 V
Transition Frequency: 75 MHz
Through Hole Mounting
Product Advantages
RoHS3 compliant
High power and voltage rating
High DC current gain
High transition frequency
Key Technical Parameters
Operating Temperature: 150°C (TJ)
Power Rating: 625 mW
Collector-Emitter Breakdown Voltage: 60 V
Collector Current (Max): 2 A
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 500 mV @ 200 mA, 2 A
Transistor Type: PNP
DC Current Gain (hFE): 40 Min @ 2 A, 2 V
Transition Frequency: 75 MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-92-3 Package
Through Hole Mounting
Application Areas
General purpose PNP transistor applications
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose This Product
RoHS3 compliance
High power and voltage rating
High DC current gain
High transition frequency
Suitable for general purpose PNP transistor applications