MMSF7P03HDR2G - onsemi

Manufacturer Part Number

MMSF7P03HDR2G

Manufacturer

onsemi

Introduction

P-channel enhancement-mode power MOSFET for general-purpose applications

Product Features and Performance

High speed switching

Low on-resistance

Low gate charge

Suitable for high frequency, high efficiency power conversion circuits

Product Advantages

Optimized for efficient power conversion

Enables compact and lightweight power supply designs

Suitable for high frequency switching applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Gate-to-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 35 mΩ @ 5.3 A, 10 V

Continuous Drain Current (Id): 7 A @ 25°C

Input Capacitance (Ciss): 1680 pF @ 24 V

Power Dissipation (Pd): 2.5 W @ 25°C

Operating Temperature: -55°C to 150°C

Quality and Safety Features

MOSFET technology for reliable operation

Surface mount package for compact design

Compatibility

Suitable for a wide range of power conversion and switching applications

Application Areas

Switch-mode power supplies

DC-DC converters

Motor drives

Industrial and consumer electronics

Product Lifecycle

Current production, no indication of discontinuation

Replacement and upgrade options available from the manufacturer

Key Reasons to Choose This Product

Excellent efficiency and power density for high-frequency switching

Robust and reliable performance across a wide temperature range

Enables compact and lightweight power supply designs

Suitable for a variety of power conversion and switching applications