MMPQ2907A - onsemi

Manufacturer Part Number

MMPQ2907A

Manufacturer

onsemi

Introduction

4-Channel PNP Bipolar Junction Transistor (BJT) Array

Product Features and Performance

4 PNP transistors in a single package

High frequency performance up to 250MHz

High current handling capability up to 600mA per transistor

Low saturation voltage of 1.6V @ 50mA, 500mA

Wide operating temperature range from -55°C to 150°C

High collector-emitter breakdown voltage of 60V

Low collector cutoff current of 20nA (max)

Minimum DC current gain (hFE) of 100 @ 150mA, 10V

Product Advantages

Space-saving 16-SOIC package

Ability to replace multiple discrete transistors with a single device

Improved reliability and performance over individual transistors

Simplified circuit design and reduced component count

Key Technical Parameters

Transistor Type: 4 PNP

Voltage Collector Emitter Breakdown (Max): 60V

Current Collector (Ic) (Max): 600mA

Current Collector Cutoff (Max): 20nA (ICBO)

Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V

Frequency Transition: 250MHz

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Surface mount 16-SOIC package

Tape and reel packaging

Application Areas

Audio amplifiers

Switches and drivers

Power supplies

General-purpose analog and digital circuits

Product Lifecycle

Current product

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

High-performance 4-channel PNP BJT array

Compact 16-SOIC package for space-constrained designs

Excellent frequency response up to 250MHz

High current handling capability up to 600mA per transistor

Low saturation voltage for efficient operation

Wide operating temperature range for versatile applications

RoHS3 compliance for use in modern electronics