Manufacturer Part Number
MMBV3700LT1G
Manufacturer
onsemi
Introduction
The MMBV3700LT1G is a high-frequency PIN diode from onsemi. It is designed for use in RF applications such as switches, attenuators, and phase shifters. The diode offers a low series resistance and low junction capacitance, making it suitable for high-frequency operations.
Product Features and Performance
PIN diode structure for high-frequency operation
Low series resistance of 1 Ohm @ 10 mA, 100 MHz
Low junction capacitance of 1 pF @ 20 V, 1 MHz
Maximum power dissipation of 200 mW
Operating temperature range up to 125°C
Product Advantages
Excellent high-frequency performance
Compact SOT-23-3 package
Reliable and durable construction
Key Reasons to Choose This Product
Ideal for use in RF switch, attenuator, and phase shifter applications
Optimized for high-frequency operations
Compact and space-saving package
Proven reliability and performance
Quality and Safety Features
Manufactured using onsemi's high-quality processes
Meets relevant industry standards and regulations
Compatibility
The MMBV3700LT1G is compatible with various RF circuit designs and can be used in a wide range of applications.
Application Areas
RF switches
Attenuators
Phase shifters
Other high-frequency RF circuits
Product Lifecycle
The MMBV3700LT1G is an obsolete product, meaning it is no longer in active production. However, onsemi may have alternative or equivalent models available. Customers are advised to contact our website's sales team for more information on available options.
MMBV809AMI Semiconductor/onsemi