MMBTH10LT1G - onsemi

Manufacturer Part Number

MMBTH10LT1G

Manufacturer

onsemi

Introduction

The MMBTH10LT1G is a high-frequency NPN bipolar junction transistor (BJT) designed for radio frequency (RF) and high-speed switching applications.

Product Features and Performance

High switching speed and high gain-bandwidth product (fT) of 650 MHz

Capable of handling up to 225 mW of power

Able to withstand collector-emitter voltages up to 25 V

Minimum DC current gain (hFE) of 60 at 4 mA and 10 V

Product Advantages

Excellent high-frequency performance

High voltage and power handling capabilities

Reliable surface mount package

Key Technical Parameters

Operating temperature range: -55°C to 150°C

Collector-emitter breakdown voltage: 25 V

Collector current (max): 150 mA

Power dissipation: 225 mW

Quality and Safety Features

ROHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Suitable for various RF and high-speed switching applications

Application Areas

RF amplifiers and oscillators

High-speed switching circuits

Instrumentation and control systems

Product Lifecycle

Current production model, no discontinuation plans

Several Key Reasons to Choose This Product

Excellent high-frequency performance for RF applications

Robust voltage and power handling capabilities

Reliable surface mount package for easy integration

Compliance with RoHS3 regulations for environmental safety