MMBT8099LT1G - onsemi

Manufacturer Part Number

MMBT8099LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT)

Single Transistor

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) Packaging

Operating Temperature Range: -55°C to +150°C

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage: 80 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage: 400 mV @ 5 mA, 100 mA

DC Current Gain (hFE): 100 min @ 1 mA, 5 V

Transition Frequency: 150 MHz

Product Advantages

Compact surface mount package

Wide operating temperature range

High power and voltage handling capabilities

Low collector cutoff current

Good DC current gain

Key Technical Parameters

Package: TO-236-3, SC-59, SOT-23-3

Supplier Device Package: SOT-23-3 (TO-236)

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a variety of electronic circuits and applications

Application Areas

General-purpose amplification and switching in electronic devices

Suitable for use in audio, power, and control circuits

Product Lifecycle

Currently available product

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Reliable performance across a wide temperature range

High power and voltage handling capabilities

Compact surface mount package

Good DC current gain for efficient amplification

RoHS3 compliance for use in a variety of applications