MMBFU310LT1 - onsemi

Manufacturer Part Number

MMBFU310LT1

Manufacturer

onsemi

Introduction

N-Channel RF Amplifier

Product Features and Performance

Low Noise Figure

High Gain

N-Channel JFET Technology

Designed for RF Amplifier and Mixer Applications

Product Advantages

Optimal for High-Frequency Applications

Enhanced Signal Integrity

Minimal Cross-Talk

High Linearity

Key Technical Parameters

V(BR)GSS (Breakdown Voltage Gate to Source): 25V

I(GSS) (Gate Leakage Current): 1pA

C(iss) (Input Capacitance): 4pF

f(T) (Transition Frequency): 1GHz

Polarization: N-Channel

Rg (Gate Resistance): 10 Ohms

Quality and Safety Features

Built to Industry Standards for Quality Management

Compliance with RoHS (Restriction of Hazardous Substances)

Compatibility

Designed for Compatibility with High-Frequency PCBs

Suitable for SMT Techniques

Application Areas

RF Amplifiers

Oscillators

Mixers

Audio and Analog Signal Processing

Communication Systems

Product Lifecycle

Obsolete

Alternatives May Be Available

Several Key Reasons to Choose This Product

High-Frequency Performance for RF Applications

Low Noise Contribution for Sensitive Signals

Robust Design for Long-Term Reliability

onsemi's Reputation for Durable and Consistent Components