MMBF4118 - onsemi

Manufacturer Part Number

MMBF4118

Manufacturer

onsemi

Introduction

Transistor JFET N-Channel designed for amplification and switching applications.

Product Features and Performance

N-Channel JFET

Breakdown Voltage: 40 V

Drain Current (Idss): 80 µA @ 10 V

Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA

Input Capacitance (Ciss): 3pF @ 10V

Power Dissipation: 225 mW

Operating Temperature Range: -55°C to 150°C

Surface Mount TO-236-3 Packaging

Product Advantages

High input impedance

Low on-state power dissipation

Fast switching speed

Low leakage current

Key Technical Parameters

Voltage - Breakdown (V(BR)GSS): 40 V

Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V

Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA

Input Capacitance (Ciss) (Max): 3pF @ 10V

Power - Max: 225 mW

Operating Temperature: -55°C ~ 150°C

Quality and Safety Features

Robust design for long-term reliability

Compliant with industry standards for quality

Compatibility

Compatible with SOT-23-3 footprint for surface mount

Application Areas

Amplifiers

Switches

Analog switches

Choppers

Commutators

Product Lifecycle

Obsolete

Check for replacement or upgrade options

Key Reasons to Choose This Product

Low cutoff voltage

High breakdown voltage catering to various applications

Stable operation over a wide temperature range

Versatility in small signal amplification

Easy integration into existing SMT processes due to standard SOT-23 packaging

Well-suited for battery-powered circuit designs due to low power consumption