MMBF0201NLT1G - onsemi

Manufacturer Part Number

MMBF0201NLT1G

Manufacturer

onsemi

Introduction

The MMBF0201NLT1G is a discrete N-channel MOSFET transistor from onsemi, designed for a variety of electronic applications.

Product Features and Performance

N-channel MOSFET transistor

Drain to Source Voltage (Vdss) of 20V

Maximum Gate-Source Voltage (Vgs) of ±20V

On-State Resistance (Rds(on)) of 1Ω @ 300mA, 10V

Continuous Drain Current (Id) of 300mA at 25°C

Input Capacitance (Ciss) of 45pF @ 5V

Power Dissipation (Pd) of 225mW at 25°C

Product Advantages

Low on-state resistance for efficient power switching

High voltage and current handling capabilities

Compact SOT-23-3 (TO-236) surface mount package

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

FET Type: N-Channel

Threshold Voltage (Vgs(th)) of 2.4V @ 250μA

Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with various electronic circuits and applications that require a small, high-performance MOSFET transistor.

Application Areas

Power management circuits

Switching applications

Control and driver circuits

Amplifier and switch-mode power supply (SMPS) designs

Product Lifecycle

Currently in production

Replacement or upgrade options may be available from onsemi or other manufacturers

Key Reasons to Choose this Product

Excellent performance-to-size ratio with low on-state resistance

Wide voltage and temperature operating range

Reliable and RoHS-compliant design

Compact and easy-to-use surface mount package

Suitable for a wide range of electronic applications