MMBD452LT1G - onsemi

Manufacturer Part Number

MMBD452LT1G

Manufacturer

onsemi

Introduction

The MMBD452LT1G is a high-performance RF Schottky diode designed for high-frequency applications.

Product Features and Performance

Schottky Diode - 1 Pair Series Connection

Voltage - Peak Reverse (Max): 30V

Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz

Power Dissipation (Max): 225 mW

Operating temperature range of -55°C to 125°C

Low Forward Voltage Drop

High Frequency Performance

Product Advantages

Low Capacitance

High Efficiency and Reliability

Suitable for High-Frequency Applications

Optimized for Low Power Loss

Key Technical Parameters

Voltage - Peak Reverse (Max): 30V

Capacitance @ Vr, F: 1.5pF

Power Dissipation (Max): 225 mW

Operating Temperature: -55°C ~ 125°C

Package: SOT-23-3 (TO-236)

Quality and Safety Features

Stable Performance over a Wide Temperature Range

High Reliability in Tough Environmental Conditions

Compatibility

Compatible with High-Speed Switching Applications

Suitable for RF Signal and Power Diode Applications

Application Areas

RF and Microwave Circuits

High-Speed Switching Applications

Power Management

Voltage Clamping

Product Lifecycle

Active

Continuously supported with no current indication of discontinuation

Several Key Reasons to Choose This Product

Optimized for RF and Microwave Applications

Low Capacitance for High-Speed Operations

Highly Reliable across Wide Operating Temperature Range

Low Power Loss Enhancing System Efficiency

Suitable for Compact and High-Density Circuit Designs