Manufacturer Part Number
MJE5852G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
Power rating: 80 W
Collector-Emitter Breakdown Voltage: 400 V
Collector Current (Max): 8 A
Collector-Emitter Saturation Voltage: 5 V @ 3 A, 8 A
DC Current Gain: 5 @ 5 A, 5 V
Product Advantages
Suitable for high-power switching applications
Robust design for reliable operation
RoHS3 compliant for environmental compliance
Key Technical Parameters
Package: TO-220-3
Operating Temperature Range: -65°C to 150°C
Transistor Type: PNP
Quality and Safety Features
RoHS3 compliant
Rigorous quality control and testing
Compatibility
Commonly used in power supplies, motor drives, and other high-power electronic applications
Application Areas
Switching power supplies
Motor drives
Industrial control systems
Automotive electronics
Product Lifecycle
This product is still in active production and widely available
Replacement or upgrade options may be available from the manufacturer or third-party suppliers
Key Reasons to Choose This Product
Reliable and robust design for high-power applications
Wide operating temperature range
RoHS3 compliance for environmental responsibility
Extensive application support and availability
MJE5740MOTOROLA
MJE5852STMicroelectronicsTRANS PNP 400V 8A TO220