Manufacturer Part Number
MJE13003G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
TO-126 package
Power rating up to 1.4W
Collector-Emitter Breakdown Voltage up to 400V
Collector Current up to 1.5A
Gain (hFE) of at least 8 at 500mA, 2V
Transition Frequency up to 10MHz
Product Advantages
Robust and reliable performance
Suitable for various switching and amplification applications
Wide operating temperature range of -65°C to 150°C
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 400V (max)
Collector Current: 1.5A (max)
Vce Saturation: 3V @ 500mA, 1.5A
Gain (hFE): 8 (min) @ 500mA, 2V
Transition Frequency: 10MHz
Quality and Safety Features
Manufactured by a reputable semiconductor company, onsemi
Meets industry standards for reliability and safety
Compatibility
Through-hole mounting
Suitable for a wide range of switching and amplification applications
Application Areas
Power supplies
Motor controls
Inverters
Switching circuits
Amplifiers
Product Lifecycle
This product is an active and widely used part
No immediate plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Robust and reliable performance
Wide operating temperature range
Suitable for diverse switching and amplification applications
Manufactured by a trusted semiconductor company
Meets industry standards for quality and safety
MJE13003-1Fairchild (onsemi)