Manufacturer Part Number
MJD41CT4G
Manufacturer
onsemi
Introduction
High-voltage, high-current NPN silicon power transistors in a DPAK package.
Product Features and Performance
Power handling capability up to 1.75W
Collector-Emitter voltage up to 100V
Collector current up to 6A
High DC current gain of 15 minimum at 3A, 4V
Transition frequency of 3MHz
Suitable for switching and amplifier applications
Product Advantages
Rugged DPAK package for power applications
High power and voltage handling
High current capability
Reliable performance
Key Technical Parameters
Operating temperature range: -65°C to 150°C
Collector-Emitter breakdown voltage: 100V
Collector current: 6A maximum
Collector cutoff current: 50A maximum
Collector-Emitter saturation voltage: 1.5V maximum at 600mA, 6A
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO certified facility
Compatibility
Suitable for various switching and amplifier applications in power electronics, industrial controls, and consumer electronics.
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
This product is an active, in-production device. onsemi continues to support this part, and replacements or upgrades may be available as needed.
Key Reasons to Choose This Product
High power and voltage handling capability
High current capacity
Reliable performance in rugged DPAK package
Suitable for a wide range of power electronics applications
Ongoing manufacturer support and availability