MJ11033G - onsemi

Manufacturer Part Number

MJ11033G

Manufacturer

onsemi

Introduction

High-power PNP Darlington transistor suitable for a wide range of power applications.

Product Features and Performance

Power handling capability up to 300 W

Collector-emitter breakdown voltage up to 120 V

Collector current up to 50 A

DC current gain of 1000 or more at 25 A, 5 V

Wide operating temperature range from -55°C to 200°C

Product Advantages

Robust and reliable performance

High power density

Efficient heat dissipation

Suitable for high current, high voltage applications

Key Technical Parameters

Power Max: 300 W

Voltage Collector Emitter Breakdown (Max): 120 V

Current Collector (Ic) (Max): 50 A

Current Collector Cutoff (Max): 2 mA

Vce Saturation (Max) @ Ib, Ic: 3.5 V @ 500 mA, 50 A

DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25 A, 5 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation up to 200°C

Compatibility

Compatible with a wide range of power electronics and industrial applications

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Industrial controls

Product Lifecycle

Current product, no discontinuation planned

Replacement or upgrade options available from the manufacturer

Several Key Reasons to Choose This Product

High power handling capability

Robust and reliable performance

Efficient heat dissipation

Suitable for high current, high voltage applications

Wide operating temperature range

RoHS3 compliance for environmental responsibility