Manufacturer Part Number
MJ11016G
Manufacturer
onsemi
Introduction
High-power NPN Darlington transistor
Product Features and Performance
Capable of handling up to 200W of power
High collector-emitter breakdown voltage of 120V
High collector current capacity of 30A
High DC current gain of 1000 at 20A, 5V
Transition frequency of 4MHz
Product Advantages
Robust and reliable performance
Capable of high-power switching and amplification applications
Suitable for use in harsh environments with wide temperature range
Key Technical Parameters
Collector-Emitter Voltage (Vceo): 120V
Collector Current (Ic): 30A
DC Current Gain (hFE): 1000 @ 20A, 5V
Power Dissipation: 200W
Operating Temperature: -55°C to 200°C
Quality and Safety Features
ROHS3 compliant
Sturdy TO-204 (TO-3) package
Compatibility
Compatible with a wide range of high-power, high-current applications
Application Areas
High-power switching and amplification circuits
Industrial motor control
Power supplies
Welding equipment
Audio power amplifiers
Product Lifecycle
Widely used and available as an industry-standard part
No known plans for discontinuation
Key Reasons to Choose This Product
Exceptional power handling and current capability
Robust and reliable performance in harsh environments
High DC current gain for efficient operation
Suitable for a wide range of high-power applications
Proven track record and industry-standard part