Manufacturer Part Number
MCH6662-TL-H
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
Surface Mount package
2 N-Channel (Dual) configuration
20V Drain to Source Voltage (Vdss)
160mOhm Rds On (Max) @ 1A, 4.5V
Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology
2A Continuous Drain Current (Id) @ 25°C
128pF Input Capacitance (Ciss) (Max) @ 10V
8nC Gate Charge (Qg) (Max) @ 4.5V
Logic Level Gate FET feature
800mW Power Max
150°C Operating Temperature (TJ)
Product Advantages
Compact surface mount package
Low on-state resistance
Efficient power handling
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1A, 4.5V
Continuous Drain Current (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Power Max: 800mW
Operating Temperature: 150°C (TJ)
Quality and Safety Features
Reliable surface mount package
Designed for high-quality performance
Compatibility
Suitable for a wide range of electronic applications
Application Areas
Suitable for use in various electronic circuits and systems
Product Lifecycle
Currently available, no information on discontinuation or replacements
Several Key Reasons to Choose This Product
Compact surface mount package
Low on-state resistance for efficient power handling
Wide operating temperature range
Reliable performance and quality
Compatibility with a wide range of electronic applications