Manufacturer Part Number
MCH6544-TL-E
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Array
Product Features and Performance
2 NPN Transistors
500MHz Transition Frequency
300 Minimum DC Current Gain (hFE) at 10mA, 2V
500mA Maximum Collector Current (Ic)
50V Maximum Collector-Emitter Breakdown Voltage
550mW Maximum Power Dissipation
100mV Typical Collector-Emitter Saturation Voltage at 10mA, 100mA
100nA Maximum Collector Cutoff Current (ICBO)
150°C Maximum Junction Temperature
Product Advantages
Compact surface mount package
High-speed performance
High current handling capability
Low saturation voltage
Key Technical Parameters
Transistor Type: 2 NPN (Dual)
Package: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Package Quantity: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and systems requiring high-speed, high-current bipolar transistors
Application Areas
Amplifiers
Switches
Logic gates
Drivers
Pulse shapers
General purpose analog and digital circuits
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
High-speed performance with 500MHz transition frequency
High current handling capability up to 500mA
Low saturation voltage for efficient operation
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-conscious applications
Availability of replacements and upgrades for long-term design support
MCH6448VBSEMI