Manufacturer Part Number
MCH6353-TL-W
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a P-Channel MOSFET transistor.
Product Features and Performance
Low on-resistance (Rds(on)) of 35 mOhm @ 3A, 4.5V
Capable of continuous drain current of 6A at 25°C
Operates at up to 150°C junction temperature
Input capacitance of 1250 pF @ 6V
Power dissipation of up to 1.4W at 25°C ambient temperature
Gate voltage range of ±10V
Product Advantages
Efficient power handling with low on-resistance
Wide operating temperature range
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Gate to Source Voltage (Vgs Max): ±10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 4.5V
Current Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 6V
Power Dissipation (Max): 1.4W
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package with flat leads (6-SMD)
Application Areas
Suitable for use in various power management and control applications
Product Lifecycle
This product is currently in production and available for purchase.
Key Reasons to Choose This Product
Excellent power handling capabilities with low on-resistance
Wide operating temperature range for versatile applications
Compact surface mount package for efficient board space utilization
RoHS3 compliance for environmentally friendly design
