Manufacturer Part Number
MCH6001-TL-E
Manufacturer
onsemi
Introduction
Dual NPN bipolar junction transistor (BJT) array
Designed for high-frequency and high-speed switching applications
Product Features and Performance
Operate at high frequencies up to 16GHz
High DC current gain (hFE) of at least 60 at 50mA, 5V
High collector current (Ic) capability of up to 150mA
Low collector-emitter breakdown voltage (BVCEO) of 8V
Low collector cutoff current (ICBO) of up to 1A
Compact 6-pin surface mount package (6-MCPH)
Suitable for operation up to 150°C junction temperature
Product Advantages
Excellent high-frequency performance
High current and voltage handling capabilities
Space-efficient surface mount package
Suitable for high-temperature applications
Key Technical Parameters
Manufacturer Part Number: MCH6001-TL-E
Package: 6-SMD, Flat Leads
Operating Temperature: 150°C (TJ)
Power Rating: 600mW
Collector-Emitter Breakdown Voltage (BVCEO): 8V
Collector Current (Ic): 150mA
Collector Cutoff Current (ICBO): 1A
DC Current Gain (hFE): 60 min. @ 50mA, 5V
Transition Frequency (fT): 16GHz
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial applications
Compatibility
Surface mount technology (SMT) compatible
Suitable for automated assembly processes
Application Areas
High-speed and high-frequency switching circuits
RF amplifiers and mixers
Telecommunications equipment
Industrial control and instrumentation
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent high-frequency performance up to 16GHz
High current and voltage handling capabilities
Compact and space-efficient surface mount package
Suitable for high-temperature environments up to 150°C
Reliable and RoHS3 compliant design
Compatibility with automated assembly processes
MCH6101-TL