Manufacturer Part Number
MCH3478-TL-W
Manufacturer
onsemi
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
30V Drain-Source Voltage (Vdss)
±12V Gate-Source Voltage (Vgs)
165mΩ Maximum On-Resistance (Rds(on)) at 1A, 4.5V
2A Continuous Drain Current (Id) at 25°C
130pF Maximum Input Capacitance (Ciss) at 10V
800mW Maximum Power Dissipation at 25°C
7nC Maximum Gate Charge (Qg) at 4.5V
Product Advantages
Compact Surface Mount Package
Low On-Resistance for Efficient Power Switching
High Current Handling Capability
Reliable Performance in Wide Temperature Range
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
30V Drain-Source Voltage (Vdss)
±12V Gate-Source Voltage (Vgs)
165mΩ Maximum On-Resistance (Rds(on))
2A Continuous Drain Current (Id)
130pF Maximum Input Capacitance (Ciss)
800mW Maximum Power Dissipation
Quality and Safety Features
RoHS3 Compliant
Reliable Performance in 150°C Junction Temperature
Compatibility
SC-70, SOT-323 Surface Mount Package
Tape & Reel Packaging
Application Areas
Power Management Circuits
Switching Regulators
Motor Control
Battery Chargers
LED Drivers
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available as technology evolves
Key Reasons to Choose This Product
Efficient power switching with low on-resistance
High current handling capability
Compact surface mount package for space-constrained designs
Reliable performance in wide temperature range
RoHS3 compliance for use in various applications
MCH3477VBSEMI
MCH3477-TLAMI Semiconductor/onsemi