Manufacturer Part Number
MCH3375-TL-H
Manufacturer
onsemi
Introduction
P-Channel Power MOSFET Transistor
Product Features and Performance
30V Drain-Source Voltage (Vdss)
295mOhm Max On-Resistance (Rds(on)) at 800mA, 10V
6A Continuous Drain Current (Id) at 25°C
82pF Max Input Capacitance (Ciss) at 10V
800mW Power Dissipation (Max) at 25°C
Wide Operating Temperature Range up to 150°C
Product Advantages
Low On-Resistance for Efficient Power Switching
High Current Handling Capability
Small Footprint SOT-23-3 Package
Surface Mount Compatibility
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 295mOhm @ 800mA, 10V
Continuous Drain Current (Id): 1.6A at 25°C
Input Capacitance (Ciss): 82pF @ 10V
Power Dissipation (Max): 800mW at 25°C
Quality and Safety Features
MOSFET Technology for Reliable Performance
Designed and Manufactured to High Quality Standards
Compatibility
Surface Mount (SMT) Compatible
Suitable for Tape and Reel Packaging
Application Areas
Power Switching Applications
DC-DC Converters
Motor Drivers
Audio Amplifiers
General Purpose Power Electronics
Product Lifecycle
Currently in Production
Replacement/Upgrade Options Available
Key Reasons to Choose
Low On-Resistance for Efficient Power Switching
High Current Handling Capability
Small Footprint for Space-Constrained Designs
Wide Operating Temperature Range
Surface Mount Compatibility for Automated Assembly
