Manufacturer Part Number
MC33151P
Manufacturer
onsemi
Introduction
The MC33151P is a high-performance power management integrated circuit (PMIC), specifically designed as a gate driver for low-side, N-Channel MOSFET applications.
Product Features and Performance
Designed for low-side gate driving
Independent channel configuration
Supports two separate drivers
Compatible with N-Channel MOSFET gate type
Operates within a supply voltage range of 6.5V to 18V
Features inverting input type
Rapid rise and fall times, typically 31ns and 32ns respectively
High peak output current of 1.5A for both sourcing and sinking
Capable of functioning in a wide temperature range from -40°C to 150°C
Product Advantages
Provides efficient and reliable driving for low-side MOSFETs
High output current capabilities enhance performance in demanding applications
Fast switching times improve overall efficiency
Robust thermal performance ensures reliability under varying conditions
Key Technical Parameters
Driven Configuration: Low-Side
Number of Drivers: 2
Voltage Supply: 6.5V ~ 18V
Current Peak Output: 1.5A (Source), 1.5A (Sink)
Operating Temperature: -40°C ~ 150°C
Quality and Safety Features
Stable operation across a broad thermal range ensuring durability
Through hole mounting provides secure and reliable physical connections
Compatibility
Specifically built for use with N-Channel MOSFETs
Supports a logical voltage input range from 0.8V (VIL) to 2.6V (VIH)
Application Areas
Ideal for use in power management tasks within automotive, industrial, and consumer electronics sectors that require reliable low-side switching
Product Lifecycle
Currently marked as Obsolete
Replacement or upgrade models should be considered as this model may no longer be produced or supported
Several Key Reasons to Choose This Product
Optimal for applications requiring robust and high-performance low-side driving
Fast switching capabilities reduce power loss and increase efficiency
High peak output currents suitable for demanding applications
Durable and reliable performance across wide operational temperatures and voltage ranges
Simplifies circuit design by targeting specific N-Channel MOSFET needs