MBR30H100MFST1G - onsemi

Manufacturer Part Number

MBR30H100MFST1G

Manufacturer

onsemi

Introduction

The MBR30H100MFST1G is a high-speed Schottky rectifier diode in a PowerTDFN package, designed for switch-mode power supply and general power conversion applications.

Product Features and Performance

Fast recovery time ≤ 500 ns

High current capability up to 30 A average rectified current

Low forward voltage drop of 900 mV @ 30 A

Reverse voltage rating of 100 V

Operating temperature range from -55°C to 150°C

Product Advantages

Compact PowerTDFN package for space-saving designs

High power density and efficiency

Excellent thermal management

Robust and reliable performance

Key Technical Parameters

Reverse Leakage Current: 100 μA @ 100 V

Forward Voltage: 900 mV @ 30 A

Recovery Time: ≤ 500 ns

Operating Temperature Range: -55°C to 150°C

Reverse Voltage Rating: 100 V

Average Rectified Current: 30 A

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to the highest quality standards

Compatibility

The MBR30H100MFST1G is a direct replacement for various high-speed Schottky rectifier diodes in similar package types and performance characteristics.

Application Areas

Switch-mode power supplies

Power conversion and regulation circuits

General industrial and consumer electronics applications

Product Lifecycle

The MBR30H100MFST1G is an actively supported product in onsemi's portfolio. There are no plans for discontinuation, and upgrade options or replacement products may be available if needed.

Several Key Reasons to Choose This Product

High power density and efficiency with excellent thermal management

Compact and space-saving PowerTDFN package

Robust and reliable performance over a wide temperature range

Fast recovery time and high current capability

RoHS3 compliance for environmentally-friendly designs