MBR1100G - onsemi

Manufacturer Part Number

MBR1100G

Manufacturer

ON Semiconductor

Introduction

The MBR1100G is a high-speed Schottky rectifier diode from ON Semiconductor, designed for use in a variety of power conversion and switching applications.

Product Features and Performance

Fast recovery time of less than 500 ns

Handles up to 1A of average rectified current

Operates at voltages up to 100V

Wide operating temperature range of -65°C to 175°C

Low forward voltage drop of 790 mV at 1A

Reverse leakage current of only 500 μA at 100V

Product Advantages

Excellent high-frequency performance

Efficient power conversion

Reliable operation across a wide temperature range

Compact and space-saving design

Key Technical Parameters

Current Reverse Leakage @ Vr: 500 μA @ 100 V

Voltage Forward (Vf) (Max) @ If: 790 mV @ 1 A

Technology: Schottky

Operating Temperature Junction: -65°C to 175°C

Voltage DC Reverse (Vr) (Max): 100 V

Speed: Fast Recovery <= 500 ns, > 200 mA (Io)

Current Average Rectified (Io): 1 A

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

The MBR1100G is a through-hole mounted device with an Axial package, suitable for a wide range of power supply and power conversion applications.

Application Areas

Switching power supplies

Power converters

Motor drives

Battery chargers

Industrial electronics

Product Lifecycle

The MBR1100G is an active and widely available product from ON Semiconductor, with no indication of discontinuation or impending replacement.

Key Reasons to Choose This Product

High-speed, high-efficiency performance for power conversion

Robust design and wide operating temperature range

Compact and space-saving Axial package

RoHS3 compliance for environmental responsibility

Proven reliability and availability from a trusted semiconductor manufacturer