Manufacturer Part Number
KSP2222ABU
Manufacturer
onsemi
Introduction
The KSP2222ABU is a general-purpose NPN bipolar junction transistor (BJT) suitable for a wide range of applications.
Product Features and Performance
High current handling capability up to 600 mA
High operating temperature up to 150°C
Wide collector-emitter breakdown voltage up to 40 V
High transition frequency up to 300 MHz
Low collector-emitter saturation voltage of 1 V @ 50 mA, 500 mA
High DC current gain (hFE) of at least 100 @ 150 mA, 10 V
Product Advantages
Suitable for a wide range of applications
Robust and reliable performance
Compact through-hole package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 40 V
Collector Current (IC): 600 mA
Collector Cutoff Current (ICBO): 10 nA
DC Current Gain (hFE): 100 @ 150 mA, 10 V
Transition Frequency (fT): 300 MHz
Power Dissipation: 625 mW
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust construction
Compatibility
Compatible with various through-hole circuit board designs
Application Areas
General-purpose amplifier and switch applications
Audio amplifiers
Power supplies
Instrumentation
Industrial control systems
Product Lifecycle
The KSP2222ABU is an active and widely available product.
Replacement or upgrade options are available from onsemi and other manufacturers.
Key Reasons to Choose This Product
Excellent performance characteristics for a wide range of applications
Robust and reliable operation at high temperatures
Compact through-hole package for easy integration
RoHS3 compliance for environmentally-conscious applications
Widely available and supported by the manufacturer
KSP2222ATAonsemiTRANS NPN 40V 0.6A TO92-3
KSP22SOTAX