Manufacturer Part Number
KSE13003H2ASTU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT)
Product Features and Performance
High voltage, high power NPN transistor
Capable of handling up to 20W of power
Operates at high voltages up to 400V
Capable of handling collector currents up to 1.5A
Transition frequency of 4MHz
Product Advantages
Robust design for high power applications
Suitable for use in high voltage circuits
Efficient power handling capabilities
Key Technical Parameters
Power Dissipation: 20W
Collector-Emitter Breakdown Voltage: 400V
Collector Current: 1.5A
Collector-Emitter Saturation Voltage: 3V @ 500mA, 1.5A
DC Current Gain: 14 @ 500mA, 2V
Transition Frequency: 4MHz
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
TO-126-3 package
Compatibility
Compatible with various through-hole mounting applications
Application Areas
High voltage, high power circuits
Industrial equipment
Power supplies
Motor control
Lighting ballasts
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose
Robust, high-power design
Capable of handling high voltages and currents
Efficient power handling
Suitable for a wide range of industrial and power applications
Readily available and compatible with common through-hole mounting
KSE13003TH1ATUonsemiTRANS NPN 400V 1.5A TO220-3