Manufacturer Part Number
KSD882YS
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor (BJT)
Designed for general-purpose switching and amplifying applications
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
Low saturation voltage for efficient power transfer
High current handling capability up to 3A
Fast transition frequency up to 90MHz
Robust construction in TO-126-3 package
Product Advantages
Reliable and durable performance
Efficient power handling
Versatile application potential
Key Technical Parameters
Power Rating: 1W
Collector-Emitter Breakdown Voltage: 30V
Collector Current (Max): 3A
Collector Cutoff Current (Max): 1A
DC Current Gain (hFE): Minimum 160 @ 1A, 2V
Transition Frequency: 90MHz
Quality and Safety Features
RoHS3 compliant
Manufacturer's TO-126-3 packaging for reliability
Compatibility
Suitable for a wide range of electronic circuit designs
Compatible with standard through-hole mounting
Application Areas
General-purpose switching and amplifying circuits
Power supply and control applications
Industrial and consumer electronics
Product Lifecycle
Mature and widely available product
No discontinuation or replacement concerns
Key Reasons to Choose This Product
Excellent power handling and efficiency
Fast switching and high-frequency capabilities
Robust and reliable performance across wide temperature range
Versatile compatibility and easy integration
Compliance with industry safety and environmental standards
