Manufacturer Part Number
KSC2690AYS
Manufacturer
onsemi
Introduction
The KSC2690AYS is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of general-purpose applications.
Product Features and Performance
High collector-emitter breakdown voltage of up to 160V
High collector current capability of up to 1.2A
Wide operating temperature range up to 150°C
High transition frequency of 155MHz
Low collector-emitter saturation voltage of 700mV @ 200mA, 1A
Minimum DC current gain (hFE) of 35 @ 5mA, 5V
Product Advantages
Excellent power handling capability
High-speed switching performance
Wide temperature operating range
Reliable and robust design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 160V
Collector Current (Max): 1.2A
Power Dissipation (Max): 1.2W
DC Current Gain (Min): 35 @ 5mA, 5V
Transition Frequency: 155MHz
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Compatibility
The KSC2690AYS is compatible with a wide range of electronic circuits and systems that require a high-performance NPN bipolar transistor.
Application Areas
Amplifiers
Switches
Power supplies
Regulators
General-purpose electronics
Product Lifecycle
The KSC2690AYS is an active product and is not nearing discontinuation. Replacement and upgrade options are available.
Key Reasons to Choose This Product
Excellent performance characteristics, including high voltage, current, and frequency capabilities
Reliable and robust design suitable for demanding applications
Wide operating temperature range
RoHS3 compliance for environmental sustainability
Compatibility with a broad range of electronic circuits and systems