KSC2383OTA - onsemi

Manufacturer Part Number

KSC2383OTA

Manufacturer

onsemi

Introduction

NPN Bipolar Junction Transistor (BJT) in TO-92-3 package

Product Features and Performance

High frequency operation up to 100 MHz

High collector current capability up to 1 A

High collector-emitter breakdown voltage up to 160 V

Compact TO-92-3 package

Product Advantages

High performance in a small package

Wide operating temperature range up to 150°C

Suitable for a variety of applications

Key Technical Parameters

Power rating: 900 mW

Collector-emitter breakdown voltage: 160 V (max)

Collector current: 1 A (max)

DC current gain (hFE): 100 (min) @ 200 mA, 5 V

Transition frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in various operating conditions

Compatibility

Suitable for through-hole mounting applications

Application Areas

Amplifiers

Switches

Drivers

Power supplies

Product Lifecycle

Current production

Replacements and upgrades may be available

Several Key Reasons to Choose This Product

High-performance NPN BJT in a compact package

Wide operating temperature range and power rating

Suitable for a variety of high-frequency, high-current applications

Reliable and RoHS3 compliant design